Electrical Properties of Melt-Epitaxy-Grown InAs_(0.04)Sb_(0.96) Layers with Cutoff Wavelength of 12 μm

Abstract

A study of the electrical properties of melt-epitaxy(ME)-grown InAs_(0.04)Sb_(0.96) epilayers with a cutoff wavelength of 12 μm was performed using Van der Pauw measurements.The temperature dependence of the electrical properties was measured.An electron mobility of 6×10~4 cm~2/Vs with a carrier density of 2.3×10~(16) cm~(-3) at 300 K,and an electron mobility of 1×10~5 cm~2/Vs with a carrier density of 1×10~(15) cm~(-3) at 200 K have been obtained in the experiments.Different behaviors of the electrical properties of samples grown using graphite and fused-silicon boats,were observed and were analyzed in terms of their scattering mechanism.The results showed that ionized impurity scattering is the dominant process at low temperatures for all the samples.Polar optical phonon scattering governs electron mobility at high temperature.C contamination has significant influence on the electron mobility below 200 K of the sample grown using a graphite boat.